2SC3172
2SC3172 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Conversion Gain : G ce=26d B (Typ.) . Low Reverse Transfer Capacitance : C re=0.4p F (Typ.)
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC
-stg
RATING 30 20
50 25 200 125
-55-125
UNIT
4.2 MAX. d
1. BASE m A
2. EMITTER m A
3. COLLECTOR
4. EMITTER m W
°C TOSHIBA Weight : 0.08g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Reverse Transfer Capacitance
!CB0 l EBO
V CB =25V, I E=0 VEB =3V, I C=0 v (BR)CE0 I C =lm A, I B =0 h FE
Vce=10V, Ic=5m A
Cre
Vc B=10V, IE=0, f=l MHz
Transition Frequency Conversion Gain Noise Figure f T
VCE=10V, Ic=5m A
Gee
Vcc=12V, f=200MHz
NF f L=260MHz
MIN.
- TYP. MAX.
- 100
- 1000
UNIT n A n A
-...
