2SC3309
2SC3309 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . Excellent Switching Times t r =1.0/ts(Max.), tf=1.0)Us(Max.) at Ic=0.8A . High Collector Breakdown Voltage : Vc EO= ^00V
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VCBO
RATING 500
UNIT
0Z.Z-LO.Z
- r i /
A- ?m °.
A-
CO at C5
X<
H o
2 to
L4
+ C125
|!|
0.76-0.15 . I.lll
- 2.54 ±0.25
» ii
1.2 a
:
2.54±Q25
Collector-Emitter Voltage
Vc EO
Emitter-Base Voltage
VEBO
Collector Current
Base...
