2SC3310
2SC3310 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. Excellent Switching Times
: t r =1.0>us(Max.), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : Vc EO=400V
MAXIMUM RATINGS (Ta=25°c> CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
SYMBOL VCBO VCEO VEBO ic ICP IB
RATING 500 400
2.0 30
UNIT
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX.
- 7.0
03.2±O.2
<>< jr
T U« (A
3 CO a o a to
«3
+ 0.25 Q76-Q15
2.54+0.25
1-2 g
. ty s
!'
2T54±0.25
<3c5
+ 1
1. BASE 2. COLLECTOR 3. EMITTER
Junction Temperature Storage Temperature Range
Ti
Tstg
ELECTRICAL CHARACTERISTICS...
