* . Excellent Switching Times : t r =1.0>us(Max.), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V MAXIMUM RATINGS (Ta=25°c> CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Di
2SC3310
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Silicon npn transistor.
: 2SC3310 i SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FE.
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