* High Transition Frequency : f T=200MHz(Min f )
* Low Saturation Voltage : VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA
* High Switching Speed : t stg^25ns(Typ. 00.45 ,02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Emitter-B
2SC395A
175.90 KB
Silicon npn transistor.
: ) SILICON NPN EPITAXIAL PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SC395A ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. .
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