2SC6010 - Silicon NPN Transistor

Datasheet Details

Part number	2SC6010
Manufacturer	Toshiba
File Size	201.83 KB
Description	Silicon NPN Transistor
Datasheet	2SC6010 Datasheet

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Full PDF Text Transcription

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2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.24μs (max) (IC = 0.3A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 600 285 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3. Emitter JEDEC JEITA TOSHIBA Weight: ― ― 2-7D101A g (typ.) Note: Using continuously under heavy loads (e.g.

Published: Oct 15, 2013 |