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2SC979A - SILICON NPN TRANSISTOR

Download the 2SC979A datasheet PDF. This datasheet also covers the 2SC979 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Breakdown Voltage : VCEO=70V(2SC979A).
  • Low Saturation Voltage : VCE(sat)=0.05V (Typ. ) at I C=10mA, I B=lmA.
  • High Transition Frequency : f T=250MHz (Typ. ) at VCE=10V, I c=10mA.
  • Low Output Capacitance : Cob=3pF (Typ. ).
  • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 >rf 2(2.54.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC979-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC979A
Manufacturer Toshiba
File Size 116.85 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC979A Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC979 SILICON NPN TRANSISTOR
2SC994 SILICON NPN TRANSISTOR
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2SC1001 SILICON NPN TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS. FEATURES • High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 >rf 2(2.
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