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2SD1208 - NPN Transistor

Key Features

  • . Excellent Wide Safe Operating Area (lOOW. Sec at Tc=25°C . Included Abalanche Diode : Vz=60±15V . High DC Current Gain : hFE=2000 ~ 20000 . Darlington Connected Type. Unit in mm 025.0 MAX. 02 1.0 MAX tt T3 +ao9 t01.0.
  • 0.03 A:.

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Datasheet Details

Part number 2SD1208
Manufacturer Toshiba
File Size 159.58 KB
Description NPN Transistor
Datasheet download datasheet 2SD1208 Datasheet

Full PDF Text Transcription for 2SD1208 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1208. For precise diagrams, and layout, please refer to the original PDF.

: 33 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER REGULATOR FOR LINE OPERATED TV. FEATURES . Excellent Wide Safe Operating Area (lOOW.Sec at Tc=25°C . Included Ab...

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Excellent Wide Safe Operating Area (lOOW.Sec at Tc=25°C . Included Abalanche Diode : Vz=60±15V . High DC Current Gain : hFE=2000 ~ 20000 . Darlington Connected Type. Unit in mm 025.0 MAX. 02 1.0 MAX tt T3 +ao9 t01.0— 0.03 A: MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO Collector Current (Continous) IC Collector Current (Peak) ICP Collector Power Dissipation (Tc=25°C) Junction Temperature PC Storage Temperature L stg EQUIVALENT CIRCUIT COLLECTOR RATING 60±15 60+15 UNIT 20 100 150 -65-150 O EMITTER 3Q2±0.2 1. BASE 2.