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2SD1426 - NPN Transistor

Key Features

  • . High Voltage : VCBo=1500V . Low Saturation Voltage : VC E(sat)=5V(Typ. ) (I C=3A, I B=0.8A) . High Speed : tf=1.0As(Max. ) (I CP=3A, Ifil (end)=0. 8A) . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. ^3.6x0.2.

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Datasheet Details

Part number 2SD1426
Manufacturer Toshiba
File Size 110.20 KB
Description NPN Transistor
Datasheet download datasheet 2SD1426 Datasheet

Full PDF Text Transcription for 2SD1426 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1426. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1 426 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBo=1500V . Low Saturation Voltage : VC E(sat)=5V(Typ...

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High Voltage : VCBo=1500V . Low Saturation Voltage : VC E(sat)=5V(Typ.) (I C=3A, I B=0.8A) . High Speed : tf=1.0As(Max. ) (I CP=3A, Ifil (end)=0. 8A) . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. ^3.6x0.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VcBO VCEO VEBO ic IE 1500 600 3.5 -3.5 PC 80 150 stg -55~150 COLLECTOR 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO