2SD1426 - NPN Transistor

Toshiba

Datasheet Details

. High Voltage : VCBo=1500V . Low Saturation Voltage : VC E(sat)=5V(Typ. ) (I C=3A, I B=0.8A) . High Speed : tf=1.0As(Max. ) (I CP=3A, Ifil (end)=0. 8A) . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. ^3.6x0.2.

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Published: Jul 16, 2018 |