2SD1429 - Silicon NPN Transistor

Toshiba

Datasheet Details

. High Voltage : VCBO=1500V . Low Saturation Voltage : VcE(sat)=4V (Typ. ) . High Speed : tf=0.5/is (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1S0MAX. 03.6 ±0.2.

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Published: Feb 2, 2015 |