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2SD1429 - Silicon NPN Transistor

Features

  • . High Voltage : VCBO=1500V . Low Saturation Voltage : VcE(sat)=4V (Typ. ) . High Speed : tf=0.5/is (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1S0MAX. 03.6 ±0.2.

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: SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBO=1500V . Low Saturation Voltage : VcE(sat)=4V (Typ.) . High Speed : tf=0.5/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1S0MAX. 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 Collector-Emitter Voltage VCEO 600 Emitter-Base Voltage VEBO Collector Current IC Emitter Current IE Collector Power Dissipation (Tc=25°C) 2.5 -2.5 80 1. BASE 2. COLLECTOR(HEAT SINK) 3.
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