2SD1429
2SD1429 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Voltage
: VCBO=1500V
. Low Saturation Voltage : Vc E(sat)=4V (Typ.)
. High Speed
: tf=0.5/is (Typ.)
. Glass Passivated Collector-Base Junction
Unit in mm 1S0MAX. 03.6 ±0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Emitter Current
Collector Power Dissipation (Tc=25°C)
2.5 -2.5
1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER
Junction Temperature
Storage Temperature Range
L stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current DC Current Gain x EB0 h FE
-55-150
TOSHIBA
2-16D1A...
