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2SD798 - NPN Transistor

Key Features

  • High DC Current Gain : hFE=1500 (Min. )(V CE=2V, I C=2A).

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Datasheet Details

Part number 2SD798
Manufacturer Toshiba
File Size 118.25 KB
Description NPN Transistor
Datasheet download datasheet 2SD798 Datasheet

Full PDF Text Transcription for 2SD798 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD798. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . 2SD798 IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min....

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ITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.SMAX., ,03.6±a.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 °C °C 2.54 2.54 d P' J-. ?c X ^ . L BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT =s2kn ! COLLECTOR EMITTER TO — 220 AI SC — 46 2 — 10A 1 A Mounting Kit