Datasheet4U Logo Datasheet4U.com

2SD819 - NPN Transistor

Key Features

  • High Voltage . Low Saturation Voltage High Speed V C BO=1500V V CE(sat)=4V (Typ. ) (I C =3A, I B =0.8A) tf =1.0ys (Max. ) (I CP =3A, I B i(end)=0-8A) Glass Passivated Collector-Base Junction. Unit in mm ;ZS25.0MAX < X.
  • GfeLOMAX. ^^"CO 1.
  • TT+H + 0.09 04>. ti.
  • 0.03 1 j |i1! 1 l CO T 30.2 ±0.2 16.9±0.2 to d.

📥 Download Datasheet

Datasheet Details

Part number 2SD819
Manufacturer Toshiba
File Size 91.66 KB
Description NPN Transistor
Datasheet download datasheet 2SD819 Datasheet

Full PDF Text Transcription for 2SD819 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD819. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS FEATURES • High Voltage . Low Saturation Voltage High Speed V C BO=1500V V CE(sat)=4V (Typ.)...

View more extracted text
e . Low Saturation Voltage High Speed V C BO=1500V V CE(sat)=4V (Typ.) (I C =3A, I B =0.8A) tf =1.0ys (Max.) (I CP =3A, I B i(end)=0-8A) Glass Passivated Collector-Base Junction. Unit in mm ;ZS25.0MAX < X* GfeLOMAX. ^^"CO 1— TT+H + 0.09 04>.ti— 0.03 1 j |i1! 1 l CO T 30.2 ±0.2 16.9±0.