2SD820 Datasheet - Toshiba

NPN Transistor

* High Voltage : VcBO=1500V

* Low Saturation Voltage : v CE(sat)=5V (Max.) (I C =4A,

* High Speed : tf=1.0ys (Max.) I B=0.8A)

* Glass Passivated Collector-Base Junction. Unit in mm 025.OMAX , 021.OMAX + Q09 £10-0.03 W MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2SD820

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Npn transistor.

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2SD820 NPN Transistor Toshiba