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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
(VGS = −10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.6 5.5 ± 0.2
0.9
1.1 ± 0.2
0.6 MAX.
4.1 ± 0.2 5.
2SJ681 Datasheet
