Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U- MOSIII)
Relay Drive, DC- DC Converter and Motor Drive Applications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
(VGS =
- 10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS =
- 100 μA (max) (VDS =
- 60 V) z Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.6 5.5 ± 0.2
1.1 ± 0.2
0.6 MAX.
4.1 ± 0.2...
