• Part: 2SK113
  • Description: Silicon N-Channel Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 128.29 KB
Download 2SK113 Datasheet PDF
Toshiba
2SK113
2SK113 is Silicon N-Channel Transistor manufactured by Toshiba.
: SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS, Features . High Breakdown Voltage : V(br)gd S =-50v . Low ON Resistance : r DS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (o FF)=100p A(Max. ) (Vd S=20V) Unit in mm 05.8MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range VGDS IG PD Tstg -50 10 250 150 -65-150 1. SOURCE m A 2. DRAIN 3. GATE ("CASE) m W JEDEC TO-li EIAJ TC- 7 , TB-8C TOSHIBA Weight : 0.31g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Gate Leakage...