| Description | : SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS, FEATURES . High Breakdown Voltage : V(br)gdS =-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (oFF)=100pA(Max. ) (VdS=20V) 2SK113 Unit in mm 05.8MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage... |
| Features |
. High Breakdown Voltage : V(br)gdS =-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (oFF)=100pA(Max. ) (VdS=20V)
2SK113
Unit in mm
05.8MAX.
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL RATING
UNIT
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
VGDS IG...
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| Datasheet |
 2SK113 Datasheet 128.29KB |
