2SK146 transistor equivalent, silicon n-channel transistor.
* High 1 y f s 1 : iyf s l=40mS(Typ.) (VDS =10V, V G s=0, lDSS=5mA)
* Excellent Pair Characteristics : |VGS1 -VGS2|= 20mV (Max.) (VDS =10V, I D=5mA)
* High Br.
DIFFERENTIAL AMPLIFIER APPLICATIONS.
DRAIN MARK
Unit in mm
6.4MAX.
FEATURES
* High 1 y f s 1 : iyf s l=40mS(Typ..
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