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2SK147 - Silicon N-Channel MOSFET

Features

  • High lyf s l : )yfsl=40mS(Typ. ) (V DS =10V, VG S=0, I D SS=5mA).
  • High Breakdown Voltage : VGds =- 40V.
  • Low Noise : NF=1.0dE (Typ . (VDS =10V, I D=5mA, f=lkHz, R=100ft).
  • High Input Impedance : I GSS=-lnA (Max. ) (vGS =-30V).
  • High Drain Power Dissipation : Pn=600mW.
  • Complementary to 2SJ72. 0.75MAX. -if.

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Datasheet Details

Part number 2SK147
Manufacturer Toshiba
File Size 146.16 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK147 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL JUNCTION TYPE 2SK147 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. Unit in mm FEATURES • High lyf s l : )yfsl=40mS(Typ.) (V DS =10V, VG S=0, I D SS=5mA) • High Breakdown Voltage : VGds =- 40V • Low Noise : NF=1.0dE (Typ . (VDS =10V, I D=5mA, f=lkHz, R=100ft) • High Input Impedance : I GSS=-lnA (Max.) (vGS =-30V) • High Drain Power Dissipation : Pn=600mW • Complementary to 2SJ72. 0.75MAX. -if MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG ?D T J T stg RATING UNIT -40 V 10 mA 600 mW 125 °C -55U25 °C 1 DRAIN 2, 0ATE a SOURCE TO 92M0D 5 JIB Weight : 0.
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