Datasheet Summary
SILICON N CHANNEL JUNCTION TYPE
LOW NOISE AUDIO AMPLIFIER APPLICATIONS.
Unit in mm
Features
- High lyf s l
: )yfsl=40mS(Typ.) (V DS =10V, VG S=0, I D SS=5mA)
- High Breakdown Voltage : VGds =- 40V
- Low Noise
:
NF=1.0dE
(Typ .
(VDS =10V, I D=5mA, f=lkHz, R=100ft)
- High Input Impedance
: I GSS=-lnA (Max.) (vGS =-30V)
- High Drain Power Dissipation : Pn=600mW
- plementary to 2SJ72.
0.75MAX.
-if
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDS IG ?D T
T stg
RATING UNIT
-40
10 mA
600 mW
°C
-55U25 °C
1 DRAIN 2, 0ATE a SOURCE TO 92M0D
5 JIB...
