Datasheet4U Logo Datasheet4U.com

3SK22 - Silicon N-Channel Transistor

Features

  • High Power Gain : Gps =20dB (Typ. ) (f=100MHz).
  • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz).
  • High Forward Transfer Admittance : |y fs | = 7ms (Typ. ) (f=lkHz).
  • High Input Impedance : Riss = 12kfi (Typ. ) (f=100MHz).
  • Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max. ) Unit in 05.8UAX.

📥 Download Datasheet

Datasheet preview – 3SK22

📁 Similar Datasheet

  • 3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK224 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK225 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK226 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK227 - Silicon N-Channel 4-pin MOSFET (Panasonic)
  • 3SK228 - Silicon NPN Triple Diffused (Hitachi Semiconductor)
  • 3SK206 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD (NEC)
  • 3SK207 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK231 - MOSFET (NEC)
Other Datasheets by Toshiba
  • 3SK28 - Silicon N-Channel Transistor
  • 3SK101 - Silicon N-Channel Transistor
  • 3SK102 - Silicon N-Channel Transistor
  • 3SK114 - Silicon N-Channel Transistor
  • 3SK115 - Silicon N-Channel Transistor
  • 3SK121 - Silicon N-Channel MOSFET
  • 3SK38A - Silicon N-Channel Transistor
  • 3SK73 - Silicon N-Channel Transistor

Full PDF Text Transcription

Click to expand full text
SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : |y fs | = 7ms (Typ.) (f=lkHz) • High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz) • Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max.) Unit in 05.8UAX. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL ^CIDO, lGl,lG2 Pd stg RATING -18 10 200 150 -65^150 UNIT mA mW TOSHIBA Weight : _L DRAIN 2. SOURCE a GATE 1 4, GATE 2 (CASE) — 72 —7 , TB — 9C 2 -5C1C 0.
Published: |