* : Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 uV/°C (Typ . High Resistance Ratio : r DS (ON) = 50ffi(Max.) at. Vg1S=3V : r DS (OFF)= 100WQ(Min.) at. Vc i S =OV Low Gate Capacitance and Offset : CD = 2.5pF(Max.), J G =0. 3pF(Max. Contains Gates Protection Diode. 0S .39! 1AX ^Zfe.
3SK38A
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Silicon n-channel transistor.
3SK38A C) ) 4 SILICON N CHANNEL MOS TYPE (INDUSTRIAL APPLICATIONS) CHOPPER CIRCUIT APPLICATIONS. SWITCHING CIRCUIT APPLICATIONS. IMPEDANCE CONVER.
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