74HC03D Datasheet - Toshiba

Quad 2-Input NAND Gate

74HC03D Features

* (1) High speed: tpz = 5 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25  (3) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V (4) Open drain structure 4. Packaging SOIC14 ©2016 Toshiba Corporation 1 Start of commercial production 2016-05 2016-08-04 Rev.3.0

74HC03D General Description

* Quad 2-Input NAND Gate (Open Drain) 2. General The 74HC03D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Pin configuration and function.

74HC03D Datasheet (171.57 KB)