900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

A1182 Datasheet

2SA1182

No Preview Available !

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = 6 V, IC = 400 mA
Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 35 V
Collector-emitter voltage
VCEO 30 V
Emitter-base voltage
VEBO 5 V
Collector current
IC
500
mA
Base current
IB 50 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −35 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE (1) (Note) VCE = −1 V, IC = −100 mA
hFE (2) (Note) VCE = −6 V, IC = −400 mA
VCE (sat) IC = −100 mA, IB = −10 mA
VBE VCE = −1 V, IC = −100 mA
fT VCE = −6 V, IC = −20 mA
Cob VCB = −6 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 400
25 ⎯ ⎯
⎯ −0.1 0.25 V
⎯ −0.8 1.0 V
200 MHz
13 pF
Note: hFE (1) classification O(0): 70 to 140, Y(Y): 120 to 240,
hFE (2) classification O: 25 (min),
Y: 40 (min),
Marking
GR(G): 200 to 400
GR: 70 (min)
(
) Marking Symbol
ZO
Z: Type Name
O: hFE Rank
1
Start of commercial production
1982-12
2014-03-01


Toshiba Electronic Components Datasheet

A1182 Datasheet

2SA1182

No Preview Available !

2SA1182
2 2014-03-01


Part Number A1182
Description 2SA1182
Maker Toshiba
Total Page 3 Pages
PDF Download

A1182 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 A1180 Unipolar Hall-Effect Switch
Allegro MicroSystems
2 A1181 Unipolar Hall-Effect Switch
Allegro MicroSystems
3 A1182 Unipolar Hall-Effect Switch
Allegro MicroSystems
4 A1182 2SA1182
Toshiba
5 A11820 RES NTWK
THICK FILM
6 A11820 RES NTWK / THICK FILM
Fenghua Advanced Technology
7 A1183 Unipolar Hall-Effect Switch
Allegro MicroSystems
8 A1184 Unipolar Hall-Effect Switches
Allegro
9 A1185 Unipolar Hall-Effect Switches
Allegro MicroSystems





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy