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A1213 - 2SA1213

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Datasheet Details

Part number A1213
Manufacturer Toshiba
File Size 189.50 KB
Description 2SA1213
Datasheet download datasheet A1213 Datasheet
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −50 −50 −5 −2 −0.4 500 1000 150 −55 to 150 V V V A A mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.
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