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Toshiba Electronic Components Datasheet

BD136 Datasheet

SILICON PNP EPITAXIAL TYPE TRANSISTOR

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BD136
BD138
IBD140I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES
. Designed for Complementary Use with BD135, BD137
and BD139
7.9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
BD136
BD138
BD140
VCBO
Collector-Emitter
Voltage
BD136
BD138
BD140
Emitter-Base Voltage
Collector Current
DC
Peak
Collector Power
Dissipation
Ta=25°C
Tc^60°C
VcEO
VEBO
ic
ICM
Junction Temperature
Storage Temperature Range
L stg
RATING
-45
-60
-80
-45
-60
-80
-5
-0.5
-1.5
6.5
150
-55-150
UNIT
1. EMITTER
2. COLLECTOR (HEAT SINK)
Z. BASE
TO— 126
TOSHIBA
Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Breakdown Voltage
BD136
BD138
BD140
ICBO
lEBO
V C B=-30V, I E =0
VCB=-30V, I E=0, Ta=125°C
V£B=-5V, I C =0
-
-
-
-45
V (BR) CEO IC=-30mA, Ib=0
-60
-80
DC Current Gain
hFE(l) VCE=-2V, I C =-5mA
hFE(2) Vce=-2V, Ic=-150mA
25
40
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
Transition Frequency
nFE(3) VcE=-2V, Ic=-500mA
VCE(sat) IC=-500mA, lB=-50mA
VB E VCE=-2V, Ic=- 500mA
f T V CE=-2V, Ic=-50mA
25
-
-
-
TYP. MAX. UNIT
- -0.1
MA
- -10
- -10 aA
--
--V
--
--
- 250
--
- -0.5
V
- -1.0
V
100 - MHz
TOSHIBA ^3^3R^>^3R^K~n^3INI iiiiiiiiiiiiiiiiiiiiiiiiiiiitlllllllllllllllllllllllllllllllllllllllllltlllllllllllllllllllllllltllllllllllllllllllllllllllllltllllllllllllllllllllllllllllllllllllllllllllllllltlllllllllllllllllllllllllllllllllllllllllll
1010


Toshiba Electronic Components Datasheet

BD136 Datasheet

SILICON PNP EPITAXIAL TYPE TRANSISTOR

No Preview Available !

l
BD136*BD138*BD140
IC _ V CE
-1.4
-70 COMMON
EMITTER
Tc=2 5'C
—50
-30
20
-a 6
*—
15
-10
-a 4 1
—5
I1
-a2 I
t
—2.5
Ig=— 1mA
r
"0 —1 —2 —3 —4 —5
COLLECTOR—EMITTER VOLTAGE VGE (V)
-1.4
-1.2
'BE
COMMON
EMITTER
VCE =-2V
Tc=2 5t
S -at
-a 4
-a 2
_--
....
.
100--
h FE _ I C
... COJ'MnM RMTTTTf.R
V CE =-2 V
... Tc == 2 5'C
aoo5-aoi -ao3 ai a.3
COLLECTOR CURRENT I c (A)
v CE(sat)
«p
H ffj
H UJ
HM w
Sn
>
f
i
o
HW
r) r*i
W<
HH-l
Jl-l
oo
o>
COMMON EMITTER
I G /I B =10
I Tc=2 5°C
-a 5
-a 3
-3 —5 —10 —30-50 —100 -300-500-1000 -200C
COLLECTOR CURRENT I c CmA)
Pn - Tc
10
INFINITE HEAT SINK
«o
BASE-EMITTER VOLTAGE VBE (V)
20 40 60 80 100 120 140
CASE TEMPERATURE Tc (°C;
CORPORATIONiiiiiltlililluiliiiiiliiHHiiiiiiiiiiiiiiiaiitiiiliiiiiiiiHiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiilliilllliiiiiiitiiiiiiiliiiliiiiiiniiiiiillliliiiiiiiiiitlllliiiiaiiliiaHlllitiiHiillllllllllllllltiiilllillllltl T'^^^BBV-MI^S.je^.
-1011-


Part Number BD136
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
Maker Toshiba
Total Page 3 Pages
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