C2499 Description
SILICON NPN EPITAXIAL PLANAR TYPE 2SC2499 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
C2499 Key Features
- 55-125
- lS 2 le) 2 (D VCE=10V, Ic=10mA, f=500MHz
- lS 2 lel 2 (2) VC E=10V, I C=10mA, f=1000MHz
- NF (1) VCE=10V, Ic=3mA, f=500MHz
- NF (2) Vr.F=10V, Ir=3mA, f=1000MHz
- UNIT GHz
- Note : Cre is measured by 3 terminal method with Capacitance Bridge
- 0.9 0.6
- f / oS
- "0".I15