C2703
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2703
Audio Power Amplifier Applications
2SC2703
Unit: mm
- High DC current gain: h FE = 100 to 320
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 5 1 0.1 900 150
- 55 to 150
Unit
V V V A A m W °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 m A h FE (1) (Note)
VCE = 2 V, IC = 100 m A h FE (2) VCE (sat)
VBE f T Cob
VCE = 2 V, IC = 800 m A IC = 800 m A, IB = 80 m A VCE = 2 V, IC = 800 m A...
