C4315 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm - Low noise figure, high gain. - NF = 1.1d B, |S21e|2 = 14d B (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 150 125 -55~125 Unit V V V m A m A m W °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition f T ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 m A VCE = 10 V, IC = 20 m A, f = 500 MHz VCE = 10 V, IC = 20 m A, f = 1 GHz VCE = 10 V, IC = 5 m A, f = 500 MHz VCE = 10 V, IC = 5 m A, f = 1 GHz Min Typ. Max Unit 5 7 ¾ GHz ¾ 10.5 19.5 14 ¾ ¾ d B ¾1¾ d B ¾...