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C4686A - Silicon NPN Triple Diffused Planar Type Transistor

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  • trolled under the Japanese Foreign Exchange and Foreign Trade Law and the U. S. Export Admini.

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2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications Unit: mm • High voltage: VCEO = 1200 V (max)(2SC4686A) • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage 2SC4686 2SC4686A Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 1500 1000 1200 5 50 100 25 2 10 150 −55 to 150 V V V mA mA W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.
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