C4781
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4781
Strobe Flash Applications Medium Power Amplifier Applications
2SC4781
Unit: mm
- High DC current gain and Excellent h FE linearity
: h FE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: h FE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC ICP IB PC Tj Tstg
30 30 10 6 4 8 0.8 900 150
- 55 to 150
A m W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the...
