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Toshiba Electronic Components Datasheet

CCS15S30 Datasheet

Schottky Barrier Diode

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Schottky Barrier Diode Silicon Epitaxial
CCS15S30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: VF(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
CCS15S30
1: Cathode
2: Anode
CST2C
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
©2015 Toshiba Corporation
1
Start of commercial production
2013-07
2015-11-13
Rev.4.0


Toshiba Electronic Components Datasheet

CCS15S30 Datasheet

Schottky Barrier Diode

No Preview Available !

5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR
Ct
IF = 1 A (Pulse test)
IF = 1.5 A (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min
CCS15S30
Typ. Max Unit
0.33 0.40
0.39
0.2 0.5
200
V
V
mA
pF
6. Marking
Marking Code
74
Fig. 6.1 Marking
Part Number
CCS15S30
7. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
©2015 Toshiba Corporation
2
2015-11-13
Rev.4.0


Part Number CCS15S30
Description Schottky Barrier Diode
Maker Toshiba
Total Page 6 Pages
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