Schottky Barrier Diode Silicon Epitaxial
• High-Speed Switching
(1) Low forward voltage: VF(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Peak reverse voltage
Average rectified current
IO (Note 1)
Non-repetitive peak forward surge current
IFSM (Note 2)
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
©2015 Toshiba Corporation
Start of commercial production