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Toshiba Electronic Components Datasheet

CMS30I40A Datasheet

Schottky Barrier Diode

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Schottky Barrier Diode
CMS30I40A
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.55 V (max)@IFM = 3.0 A
(2) Average forward current: IF(AV) = 3.0 A
(3) Repetitive peak reverse voltage: VRRM = 40 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit Pin Assignment
CMS30I40A
3-4E1S
1: Anode
2: Cathode
Start of commercial production
2010-10
1 2014-04-01
Rev.2.0


Toshiba Electronic Components Datasheet

CMS30I40A Datasheet

Schottky Barrier Diode

No Preview Available !

CMS30I40A
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF(AV) (Note 1)
3.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
25
Junction temperature
Tj
150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: T= 103 , square wave (α = 180°), VR = 20 V
Note 2: f = 50 Hz, half-sine wave
5. Thermal Characteristics
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-a)
Thermal resistance (junction-to-lead)
Rth(j-ℓ)
Note
Test Condition
Max
Device mounted on a ceramic board
(soldering land size: 2 mm × 2 mm)
Device mounted on a glass-epoxy board
(soldering land size: 6 mm × 6 mm)
Junction to cathode lead
60
135
16
6. Electrical Characteristics (Unless otherwise specified, Ta = 25)
Unit
/W
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Peak forward voltage
VFM(1)
IFM = 0.5 A (pulse measurement)
0.32
V
VFM(2)
IFM = 1.0 A (pulse measurement)
0.37
VFM(3)
IFM = 3.0 A (pulse measurement)
0.49 0.55
Repetitive peak reverse current
IRRM(1)
VRRM = 5 V (pulse measurement)
8
µA
IRRM(2)
VRRM = 40 V (pulse measurement)
17 100
Junction capacitance
Cj VR = 10 V, f = 1.0 MHz
62 pF
7. Marking
Marking Code
SN
Part Number
CMS30I40A
Fig. 7.1 Marking
2
2014-04-01
Rev.2.0


Part Number CMS30I40A
Description Schottky Barrier Diode
Maker Toshiba
Total Page 8 Pages
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