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D2385 - 2SD2385

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Other Datasheets by Toshiba

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    2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating Unit 140 V 140 V 5 V 8 A 0.1 A 120 W 150 °C −55 to 150 °C Equivalent Circuit COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.
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