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Toshiba Electronic Components Datasheet

D2385 Datasheet

2SD2385

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2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min)
· Complementary to 2SB1556
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
140
140
5
8
0.1
120
150
55 to 150
Equivalent Circuit
Unit
V
V
V
A
A
W
°C
°C
COLLECTOR
BASE
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
100
EMITTER
1 2003-02-04


Toshiba Electronic Components Datasheet

D2385 Datasheet

2SD2385

No Preview Available !

2SD2385
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 7 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 12 A
IC = 7 A, IB = 7 mA
VCE = 5 V, IC = 7 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
140
5000
2000
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
5.0 µA
5.0 µA
――
V
30000
――
2.5
V
3.0
V
30 MHz
110
pF
Marking
TOSHIBA
2SD2385
JAPAN
hFE classification (A/B/C)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04


Part Number D2385
Description 2SD2385
Maker Toshiba
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D2385 Datasheet PDF






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