Datasheet4U Logo Datasheet4U.com

DF2B5M4ASL - ESD Protection Diodes

Key Features

  • (1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±16 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 m.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DF2B5M4CT TVS Diode Leiditech
DF2B5M4SL ESD Protection Diodes Toshiba Semiconductor
DF2B18FU ESD Protection Diodes Toshiba Semiconductor
DF2B20M4SL ESD Protection Diodes Toshiba Semiconductor
DF2B29FU ESD Protection Diodes Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
DF2B6M4ASL ESD Protection Diodes
DF2B6M4BSL ESD Protection Diodes
DF2B7ASL ESD Protection Diodes
DF2S14P2CTC ESD Protection Diodes
DF2S16FS ESD Protection Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESD Protection Diodes Silicon Epitaxial Planar DF2B5M4ASL DF2B5M4ASL 1. General The DF2B5M4ASL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B5M4ASL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B5M4ASL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a small footprint. 2.