DF5G5M4N - ESD Protection Diodes

Toshiba

Key Features

(1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor d.

DF5G5M4N esd protection diodes by Toshiba - Datasheet Preview

Datasheet Details

Part number	DF5G5M4N
Manufacturer	Toshiba
File Size	250.91 KB
Description	ESD Protection Diodes
Datasheet	DF5G5M4N Datasheet

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Full PDF Text Transcription (Reference)

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ESD Protection Diodes Silicon Epitaxial Planar DF5G5M4N DF5G5M4N 1. General The DF5G5M4N is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF5G5M4N provides low dynamic resistance and superior protective performance. Furthermore, the DF5G5M4N is a multibit device with a flow-through type design that is easy for board layout and mounting. 2. Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3.