GT20J121 igbt equivalent, silicon n-channel igbt.
(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A) (5) T.
* Dedicated to Current-Resonant Inverter Switching Applications
* Dedicated to Partial-Switching Power Factor Co.
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