* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A) (5) TO-220SIS (Toshiba package name) 3. Packaging and Internal Circuit GT20J121 TO-220SIS 1: Gate 2: Collector 3: Emitter ©2021 1
GT20J121 Datasheet (253.14 KB)
GT20J121
253.14 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedic.
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