* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 40 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 20 A, Ta = 25 ) (6) High junction tem
GT20N135SRA Datasheet (643.34 KB)
GT20N135SRA
643.34 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT20N135SRA GT20N135SRA 1. Applications Dedicated to Voltage-Resonant Inverter Switching Application.
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