* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 30 A, Ta = 25
* ) (6) High junction
GT30J110SRA Datasheet (539.97 KB)
GT30J110SRA
539.97 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1. Applications Dedicated to Voltage-Resonant Inverter Switching Application.
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