GT30J110SRA - Silicon N-Channel IGBT

Product Overview

Toshiba

Part number	GT30J110SRA
Manufacturer	Toshiba
File Size	539.97 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J110SRA Datasheet
Additional preview pages of the GT30J110SRA datasheet.

(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ. ) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 30 A, Ta = 25.
) (6) High junction temperature: Tj = 175.
(max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector (Heatsink) 3: Emitter ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of co.

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Published: Jan 30, 2024 |