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GT50J123 - Silicon N-Channel IGBT

Key Features

  • (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-10 2018-11-15 Rev.1.0 GT50J123 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitte.

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Datasheet Details

Part number GT50J123
Manufacturer Toshiba
File Size 214.44 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50J123 Datasheet

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Discrete IGBTs Silicon N-Channel IGBT GT50J123 1. Applications • Hard Switching • High-Speed Switching • Power Factor Correction (PFC) 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-10 2018-11-15 Rev.1.0 GT50J123 4.