GT50J341 - Silicon N-Channel IGBT

Product Overview

Toshiba

Part number	GT50J341
Manufacturer	Toshiba
File Size	245.42 KB
Description	Silicon N-Channel IGBT
Datasheet	GT50J341 Datasheet
Additional preview pages of the GT50J341 datasheet.

(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ. ) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ. ) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.3.0 GT50J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emi.

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Published: Jan 30, 2024 |