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GT50J341 - Silicon N-Channel IGBT

Key Features

  • (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ. ) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ. ) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.3.0 GT50J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emi.

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Datasheet Details

Part number GT50J341
Manufacturer Toshiba
File Size 245.42 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50J341 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.3.0 GT50J341 4.