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GT50JR21 - Silicon N-Channel IGBT

Key Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.08 µs (typ. ) (IC = 50 A) FWD : trr = 0.35 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.45 V (typ. ) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT.

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Datasheet Details

Part number GT50JR21
Manufacturer Toshiba
File Size 201.84 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50JR21 Datasheet

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Discrete IGBTs Silicon N-Channel IGBT GT50JR21 GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.08 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.45 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT50JR21 4.