GT50JR22
GT50JR22 is Silicon N-Channel IGBT manufactured by Toshiba.
Features
(1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
1 2012-10-15 Rev.1.0
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC)
(Tc = 25) (Tc = 100)
VCES 600 V
VGES
±25
IC 50 A
Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque
(Tc = 25) (Tc = 100)
(Note 1)
ICP IF IFP PC
Tj Tstg TOR
100 40 100 230 115 175 -55 to 175 0.8
W Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the...
