* (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC
GT50JR22 Datasheet (201.59 KB)
GT50JR22
201.59 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note.
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