* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A
GT50NR21 Datasheet (216.31 KB)
GT50NR21
216.31 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note.
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