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GT50NR21 - Silicon N-Channel IGBT

Key Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ. ) (IC = 50 A) FWD : trr = 0.50 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ. ) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09 1 2014-01-07 Rev.3.0 GT50NR21.

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Datasheet Details

Part number GT50NR21
Manufacturer Toshiba
File Size 216.31 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50NR21 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09 1 2014-01-07 Rev.3.0 GT50NR21 4.