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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G151
GT8G151
Strobe Flash Applications
• Enhancement-mode • Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) • Peak collector current: IC = 150 A (max) • Compact and Thin (TSON-8) package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
400
V
DC
VGES
±4
Gate-emitter voltage
V
Pulse
VGES
±5
Collector current
Pulse (Note 1)
ICP
150
A
Collector power
(Note 2a)
PC (1)
0.83
W
dissipation(t = 10 s)
(Note 2b)
PC (2)
0.69
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
GT8G151 Datasheet
