HN1A07F - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN1A07F
Manufacturer	Toshiba
File Size	137.70 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN1A07F Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F HN1A07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = −6V, IC = −400mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* −5 V −500 mA −100 mA 300 mW 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.