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HN1A07F Toshiba (https://www.toshiba.com/) Silicon PNP Epitaxial Type Transistor

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Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F HN1A07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = −6V, IC = −400mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage ...
Features N1A Weight: 0.015mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and ind...

Datasheet PDF File HN1A07F Datasheet - 137.70KB
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