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HN1B01FU - Silicon PNP/NPN Epitaxial Type Transistor

HN1B01FU Product details

Features

  • (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Q2 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 1.

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Datasheet Details

Part number
HN1B01FU
Manufacturer
Toshiba ↗
File Size
597.33 KB
Datasheet
HN1B01FU-Toshiba.pdf
Description
Silicon PNP/NPN Epitaxial Type Transistor

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Silicon PNP NPN Epitaxial Type Transistor Toshiba
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