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HN3C56FU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN3C56FU
Audio Frequency General Purpose Amplifier Applications
Unit: mm
z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity
: VCEO = 50V, IC = 150mA (max) : hFE = 120 to 400 : hFE (IC = 0.1mA) / (IC = 2mA)
= 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
VCEO VEBO
IC IB PC*
50
V
5
V
150
mA
30
mA
200
mW
1.COLLECTOR1 (C1)
2.EMITTER1
(E2)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
6.
HN3C56FU Datasheet
