HN4D02JU Description
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance.
HN4D02JU is Silicon Epitaxial Planar Type Diode manufactured by Toshiba .
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance.