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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN4K03JU
HN4K03JU
High Speed Switching Applications Analog Switch Applications
Unit: mm
z High input impedance z Low gate threshold voltage: Vth = 0.5 to 1.5V z Excellent switching times z Small package
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage DC Drain current Drain power dissipation Channel temperature Storage temperature range
VDS VGSS
ID PD* Tch Tstg
20
V
10
V
100
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
HN4K03JU Datasheet
