| Description | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8 to −2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1827 Marking Equivalent Circuit 2SJ344 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain ... |
| Features |
riate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain c...
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| Datasheet |
 J344 Datasheet - 290.97KB |
