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J344 Toshiba (https://www.toshiba.com/) 2SJ344

Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8 to −2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1827 Marking Equivalent Circuit 2SJ344 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain ...
Features riate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain c...

Datasheet PDF File J344 Datasheet - 290.97KB

J344  






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