JDV2S17S Overview
JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suitable for use in a small-size tuner.
JDV2S17S Datasheet Details
| Part number | JDV2S17S |
|---|---|
| Datasheet | JDV2S17S_Toshiba.pdf |
| File Size | 156.00 KB |
| Manufacturer | Toshiba |
| Description | VCO |
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