K1061
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications Analog Switch Applications Interface Applications
2SK1061
Unit: mm
- Excellent switching times: ton = 14 ns (typ.)
- High forward transfer admittance: |Yfs| = 100 m S (min)
- Low on resistance: RDS (ON) = 0.6 Ω (typ.)
- Enhancement-mode
- plementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID IDP PD Tch Tstg
200 800 300 150
- 55~150 m A m W °C °C
JEDEC JEITA TOSHIBA
― ― 2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...
