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K10A60D Toshiba (https://www.toshiba.com/) N-Channel MOSFET

Title N채널 600V 10A(Ta) 45W(Tc) 스루홀 TO-220SIS
Description TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char...
Features y under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate ...

Datasheet PDF File K10A60D Datasheet - 202.57KB
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DigiKey
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DigiKey
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Avnet Asia
2500
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RS
70
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Bristol Electronics
4550
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EBV Elektronik
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Win Source Electronics
50000
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